MOSFET Total Loss Calculator
Conduction + switching loss at a given fsw, Id, Vds.
How to Use
- Enter Rds, Id, Vds, duty, fsw, and switching times.
- Total = Pcond + Psw.
Show Work
Formulas
History of MOSFET Switching Loss
The power MOSFET was commercialized in 1976 by International Rectifier (IRF series), offering a transistor that could be switched by voltage rather than current — a transformative improvement over bipolar power devices. By the mid-1980s, switch-mode power supplies had adopted MOSFETs almost universally, and the understanding of MOSFET loss mechanisms crystallized into the conduction-plus-switching-loss model this calculator implements.
The triangular switching-energy approximation comes from idealized piecewise-linear analysis of the turn-on and turn-off waveforms: voltage and current cross during the switching transition, producing instantaneous power that peaks at Vds·Id/4. The time-integrated energy per edge is ½·V·I·t, and this multiplied by fsw gives the average switching power. Real waveforms depart from pure triangles (parasitic inductance causes ringing; reverse-recovery of the body diode adds extra loss), but the formula remains a useful first-order estimate.
Modern designs push against both loss floors: low-RDS(on) MOSFETs for high-current applications (TI CSD series, Infineon OptiMOS), low-Qg devices for high-frequency applications (GaN HEMTs from GaN Systems, EPC, Transphorm), and soft-switching topologies (LLC resonant, phase-shift full-bridge) that eliminate switching losses entirely by arranging zero-voltage or zero-current transitions. This calculator helps identify which regime you\'re in.
About This Calculator
Enter RDS(on), drain current (RMS), drain-source voltage, duty cycle, switching frequency, and total switching time (tr + tf). The tool computes conduction loss, switching loss, total loss, and the conduction-fraction percentage — use the last to spot which loss dominates in your design.
For accurate analysis: use RDS(on) at actual junction temperature (it rises ~0.4%/°C above 25°C), RMS drain current (not average), and tr+tf from the datasheet\'s Qgd/Ig analysis (typically 20–100 ns for standard MOSFETs). Add gate-drive power Qg·Vgs·fsw separately if it matters at your frequency. All math runs client-side.
Frequently Asked Questions
tr/tf?
Voltage/current crossover times from datasheet (Qgd region).
Gate loss?
Qg·Vgs·fsw — small but relevant at high fsw.
Common Use Cases
Buck High-side
Hard switch.
LLC Resonant
ZVS — Psw ≈ 0.
Last updated: